Structural, Electronic Structure, and Electrical Properties of Pure and Vanadium-Doped CuCrO2 Thin Films

• Published in: Journal of electronic materials Vol. 53; no. 11; pp. 6778 - 6784
• Main Authors: Bishnoi, Bhagwanti, Sharma, Aditya, Dhillon, Anju, Barot, Nishant, Mehta, P. K., Chae, Keun Hwa
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.11.2024; Springer Nature B.V
• Subjects: Absorption spectroscopy; Characterization and Evaluation of Materials; Chemistry and Materials Science; Current voltage characteristics; Doping; Electrical properties; Electrical resistivity; Electronic structure; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Orbitals; Original Research Article; Pulsed laser deposition; Pulsed lasers; Silicon substrates; Solid State Physics; Spectrum analysis; Temperature dependence; Thin films; Valence; X ray absorption; X-ray diffraction; CuCrO; characteristics; –; XRD; XAS; resistivity
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-024-11342-z

Delafossite CuCrO 2 (CCO), CuCr 0.96 V 0.04 O 2 (CCVO) thin films were successfully prepared on Si (100) substrates, using the pulsed laser deposition technique. The effect of doping was studied using x-ray diffraction (XRD), x-ray absorption spectroscopy (XAS), temperature-dependent resistivity measurements, and I – V characteristics. The XRD results confirmed the single-phase rhombohedral structure of the prepared thin films, and the XAS results conveyed the mixed Cu + and Cu 2+ ions in the CCVO and CCO samples. The valence state of Cr was unaltered under the doping effects and remained + 3 (i.e., Cr +3 ). The modified hybridization of the O 2 p orbitals with the metal d (V, Cr,) orbitals was confirmed in the O K-edge spectra. Insertion of V 5+ ions in the CCO lattice introduced an electron doping effect. Thus, the basic p -type character of CCO was affected by the V doping and, therefore, increases in the resistivity or decreases in the p -type character were observed in the I – V measurements. From this study; the method of selective mono-doping can be a useful tool to tailor the bandgap and the type of conductivity in other delafossite semiconductors.