Performance metrics of layered ZTO and Na-ZTO MOSFETs and its impact on electrical, magnetic, and optoelectronic parameters

• Published in: Journal of materials science. Materials in electronics Vol. 35; no. 28; p. 1853
• Main Authors: Lephe, S., Gifrin Fredik Raj, S. M., Janaki, S., Jamina, C., Jerome Das, S., Sahaya Jude Dhas, S., Arun Jose, L.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.10.2024; Springer Nature B.V
• Subjects: Aluminum oxide; Backplanes; Carrier mobility; Characterization and Evaluation of Materials; Chemistry and Materials Science; Current carriers; Dopants; Electric contacts; Electrical properties; Electronics; Electrons; Emission analysis; Field emission microscopy; Light emitting diodes; Liquid crystal displays; Materials Science; Metal oxides; Microscopy; MOSFETs; Optical and Electronic Materials; Optoelectronic devices; Performance measurement; Photoconductivity; Photoelectrons; Silicon substrates; Silver; Sodium; Spin coating; Threshold voltage; Tin oxides; X ray photoelectron spectroscopy
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-024-13604-2

In the field of backplane electronics and display technologies, ZTO is an essential component of flexible displays, light-emitting diodes, and liquid crystal displays. A cost-effective method of fabricating the device has been investigated in comparison with the addition of sodium as a dopant onto the Zinc Tin Oxide (ZTO) metal oxide semiconducting material. Because the solution-processed spin coating technique provides a large active area and high efficiency over the area deposited with the metal oxide semiconducting material, it has been adopted for the device’s fabrication. The top contact bottom gate technique has been preferred for the fabrication of active semiconducting materials in the ZTO and Na-ZTO MOSFETs, while pure silver paste (Ag) has been selected for the source and drain materials. It is regarded as more appealing to utilize an N-type phosphorus-doped silicon substrate because it acts as a gate material in and of itself. The substrate has been coated with aluminum oxide, a high-k dielectric material, to effectively isolate the gate electrode from the semiconductor channel. Field-effect mobility of approximately 5.23 and 7.9 cm 2  V −1  s −1 is obtained from the electrical characterization of the fabricated ZTO and Na-ZTO MOSFETs. The subthreshold slope is calculated to be 0.251 V/decade and 0.283 V/decade, and the threshold voltage is reported as 0.1882 V and 0.165 V, respectively. Charge carrier mobility in the Na-ZTO MOSFET is enhanced because the dopant sodium can passivate the trap holes in the channel, thereby increasing carrier mobility. To evaluate the dependability and longevity of the manufactured device, electrical characterization has been done in various light conditions, including bright and dim, demonstrating the photoconductivity that indicates the device’s suitability for optoelectronic properties. The Hall density and mobility of the MOSFETs have been analyzed, with values of 1.24 × 10 23  cm −3 and 2.99 × 10 23  cm −3 , respectively, and 3.52 × 10 –4 and 5.87 × 10 –4 cm 2  eV −1  s −1 , respectively. X-ray diffraction and X-ray photoelectron spectroscopic studies have been performed to confirm the materials deposited onto the substrate and to analyze the structure, composition, topography, and material deposited. Atomic force microscopy and field emission scanning electron microscopy have been employed to analyze surface morphology. Since ZTO is utilized in transparent electronics and display technologies, it has a greater influence than ZTO MOSFET when combined with sodium dopant, which increases field-effect mobility.