A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer

Porosifying the surface of a single crystalline silicon carbide (4H-SiC) wafer with the means of metal assisted photo chemical etching (MAPCE) promotes the adhesion of an electroplated nickel (Ni) layer. By utilizing a mechanical peel-off process, a Ni layer with tailored mechanical stress is peeled...

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Bibliographic Details
Published inMaterials science forum Vol. 1124; pp. 35 - 41
Main Authors Pfusterschmied, Georg, Schmid, Ulrich, Leitgeb, Markus, Wahid, Shan Nizam
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 21.08.2024
Subjects
Chemical etching
Silicon carbide
Spalling
4H-SiC
Ni Plating
Thin Foil
MAPCE
Controlled Spalling
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Summary:Porosifying the surface of a single crystalline silicon carbide (4H-SiC) wafer with the means of metal assisted photo chemical etching (MAPCE) promotes the adhesion of an electroplated nickel (Ni) layer. By utilizing a mechanical peel-off process, a Ni layer with tailored mechanical stress is peeled off such that also a thin layer of 4H-SiC is teared apart from the wafer as well.
Bibliography:Special topic volume with invited peer-reviewed papers only
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-8AEonP