High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils

• Published in: Materials science forum Vol. 1124; pp. 43 - 49
• Main Authors: Pfusterschmied, Georg, Zellner, Christopher, Leitgeb, Markus, Kirnbauer, Alexander, Schwarz, Sabine, Vengattoor Raghu, Appu, Schmid, Ulrich, Perazzi, Marco, Hahn, Rainer
• Format: Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 21.08.2024
• Subjects: Foils; High temperature; Rare gases; Silicon carbide; Single crystals; Annealing; Photoelectrochemical Etching; Porous 4H-SiC; Thin Foil

This work reports on the high-temperature reorganization behavior of single-crystalline porous 4H-silicon carbide (4H-SiC) thin foils. Porous 4H-SiC thin foils are realized via state-of-the-art photoelectrochemical etching in hydrofluoric (HF) acid solution enabling for the first time a released foi...