High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils

This work reports on the high-temperature reorganization behavior of single-crystalline porous 4H-silicon carbide (4H-SiC) thin foils. Porous 4H-SiC thin foils are realized via state-of-the-art photoelectrochemical etching in hydrofluoric (HF) acid solution enabling for the first time a released foi...

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Bibliographic Details
Published inMaterials science forum Vol. 1124; pp. 43 - 49
Main Authors Pfusterschmied, Georg, Zellner, Christopher, Leitgeb, Markus, Kirnbauer, Alexander, Schwarz, Sabine, Vengattoor Raghu, Appu, Schmid, Ulrich, Perazzi, Marco, Hahn, Rainer
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 21.08.2024
Subjects
Foils
High temperature
Rare gases
Silicon carbide
Single crystals
Annealing
Photoelectrochemical Etching
Porous 4H-SiC
Thin Foil
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Summary:This work reports on the high-temperature reorganization behavior of single-crystalline porous 4H-silicon carbide (4H-SiC) thin foils. Porous 4H-SiC thin foils are realized via state-of-the-art photoelectrochemical etching in hydrofluoric (HF) acid solution enabling for the first time a released foil with a diameter of 2 inches. Subsequent annealing under inert gas atmosphere and comparison between samples suggests that a temperature of 1500 °C allows for various degrees of compactification across the foil surface, whereas at 1600 °C single crystallinity can be preserved.
Bibliography:Special topic volume with invited peer-reviewed papers only
ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-D0xoyc