Enhancing Short-Term Plasticity by Inserting a Thin TiO2 Layer in WOx-Based Resistive Switching Memory

• Published in: Coatings (Basel) Vol. 10; no. 9; p. 908
• Main Authors: Cho, Hyojong, Kim, Sungjun
• Format: Journal Article
• Language: English
• Published: 22.09.2020
• ISSN: 2079-6412; 2079-6412
• DOI: 10.3390/coatings10090908

In this work, we emulate biological synaptic properties such as long-term plasticity (LTP) and short-term plasticity (STP) in an artificial synaptic device with a TiN/TiO2/WOx/Pt structure. The graded WOx layer with oxygen vacancies is confirmed via X-ray photoelectron spectroscopy (XPS) analysis. The control TiN/WOx/Pt device shows filamentary switching with abrupt set and gradual reset processes in DC sweep mode. The TiN/WOx/Pt device is vulnerable to set stuck because of negative set behavior, as verified by both DC sweep and pulse modes. The TiN/WOx/Pt device has good retention and can mimic long-term memory (LTM), including potentiation and depression, given repeated pulses. On the other hand, TiN/TiO2/WOx/Pt devices show non-filamentary type switching that is suitable for fine conductance modulation. Potentiation and depression are demonstrated in the TiN/TiO2 (2 nm)/WOx/Pt device with moderate conductance decay by application of identical repeated pulses. Short-term memory (STM) is demonstrated by varying the interval time of pulse inputs for the TiN/TiO2 (6 nm)/WOx/Pt device with a quick decay in conductance.