A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

A 25-40 GHz monolithic low-noise amplifier (LNA) is designed and fabricated with the 100 nm gallium nitride on silicon carbide (GaN-on-SiC) technology. This four-stage-cascade monolithic LNA performs a low DC power consumption of 150 mW and noise figure of 1.6-2.2 dB. Moreover, the gain of 34-37 dB...

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Bibliographic Details
Published inApplied Computational Electromagnetics Society journal pp. 822 - 828
Main Authors Dai, Zhou, Li, Chunyu, Yan, Junda, Zhang, Tiancheng, Bao, Huaguang
Format Journal Article
LanguageEnglish
Published 01.10.2023
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Summary:A 25-40 GHz monolithic low-noise amplifier (LNA) is designed and fabricated with the 100 nm gallium nitride on silicon carbide (GaN-on-SiC) technology. This four-stage-cascade monolithic LNA performs a low DC power consumption of 150 mW and noise figure of 1.6-2.2 dB. Moreover, the gain of 34-37 dB with the continuous wave of more than 2 W over 24 hours can be achieved covering the operating bandwidth. Hence, this state-of-art LNA possesses a great potential to be directly integrated with GaN power amplifiers and other microwave components to realize the high-integration, high-reliability, and high-power RF front-end.
ISSN:1054-4887
1943-5711
DOI:10.13052/2023.ACES.J.381010