Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

• Published in: Journal of China universities of posts and telecommunications Vol. 24; no. 6; pp. 74 - 82
• Main Authors: Qianneng, Zhou, Ling, Zhu, Hongjuan, Li, Jinzhao, Lin, Liangcai, Wang, Wei, Luo
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.12.2017
• Subjects: power supply rejection ratio; pre-regulator; subthreshold MOS bandgap reference; temperature coefficient; subthreshold MOS bandgap reference; power supply rejection ratio; pre-regulator; temperature coefficient
• ISSN: 1005-8885
• DOI: 10.1016/S1005-8885(17)60244-9

Novel high power supply rejection ratio （PSRR） high-order temperature-compensated subthreshold metal-oxidesemiconductor （MOS） bandgap reference （BGR） is proposed in Semiconductor Manufacturing International Corporation （SMIC） 0.13 gm complementary MOS （CMOS） process. By adopting subthreshold MOS field-effect transistors （MOSFETs） and the piecewise-curvature temperature-compensated technique, the output reference voltage＇s temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient （TC） of the subthreshold MOS BGR is 1.38× 10^-6/℃ when temperature is changed from -40 ℃ to 125 ℃ with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of - 104.54 dB, - 104.54 dB,- 104.5 dB, - 101.82 dB and - 79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.