Electrical and Optical Properties of Thin-Film Bismuth Ferrite

• Published in: Technical physics Vol. 69; no. 3; pp. 526 - 533
• Main Authors: Dybov, V. A., Kalinin, Yu. E., Kamynin, A. A., Kashirin, M. A., Makagonov, V. A., Nikonov, A. E., Serikov, D. V., Sitnikov, A. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 2024; Springer Nature B.V
• Subjects: Argon; Bismuth; Bismuth ferrite; Carrier injection; Classical and Continuum Physics; Conduction bands; Current carriers; Electric field strength; Electrical properties; Electrical resistivity; Magnetic properties; Magnetron sputtering; Optical properties; Physics; Physics and Astronomy; Thin films; electrical conductivity; memristor effect; strong electric fields; optical absorption coefficient
• ISSN: 1063-7842; 1090-6525
• DOI: 10.1134/S1063784224020117

The optical and electrical properties of bismuth ferrite thin films obtained by high-frequency magnetron sputtering in an atmosphere of argon and oxygen (80% + 20%) has been studied. Investigations of the optical properties have shown that for polycrystalline bismuth ferrite films the optical band gap is ~2 . 3 eV, which is in the range of given in the literature values. The dependences of the specific electrical conductivity on the magnitude of the electric field has been studied for the synthesized films. It has been established that the electrical conductivity does not depend on the electric field strength up to the value of E = 2 . 1 × 10 6 V/m. The experimental results are discussed in terms of the model of charge carrier injection from aluminum electrode into the conduction band of bismuth ferrite.