Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide

• Published in: Crystallography reports Vol. 69; no. 4; pp. 556 - 560
• Main Authors: Komolov, A. S., Pronin, I. A., Lazneva, E. F., Sobolev, V. S., Dubov, E. A., Komolova, A. A., Zhizhin, E. V., Pudikov, D. A., Pshenichnyuk, S. A., Becker, Ch. S., Kazantsev, M. S., Akbarova, F. Dj, Sharopov, U. B.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.08.2024; Springer Nature B.V
• Subjects: Benzene; Conduction bands; Crystallography and Scattering Methods; Electron states; Nanomaterials and Ceramics; Oligomers; Physics; Physics and Astronomy; Silicon dioxide; Surface roughness; Thin films; Zinc oxide
• ISSN: 1063-7745; 1562-689X
• DOI: 10.1134/S1063774524601266

The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO 2 ) n -Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above E F was analyzed. Furan-phenylene co-oligomer films on the (SiO 2 ) n -Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.