The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors

It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of n + / n GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth fo...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 58; no. 3; pp. 254 - 262
Main Authors Protasov, D. Yu, Kamesh, P. P., Svit, K. A., Dmitriev, D. V., Makeeva, A. A., Rzaev, E. M., Zhuravlev, K. S.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.03.2024
Springer Nature B.V
Subjects
Electron distribution
Etching
Ethylenediaminetetraacetic acids
Field effect transistors
Illumination
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Semiconductor devices
elecrochemical profiling
GaAs
concentration profile distortions
etching defects
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Summary:It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of n + / n GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the n + -layer > 4 × 10 18 cm –3 when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in n + / n GaAs structures it is necessary to limit the illumination up to 25 W.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624030126