Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated a...

Full description

Saved in:
Bibliographic Details
Published inLithuanian journal of physics Vol. 56; no. 4; pp. 217 - 222
Main Authors Ardaravičius, Linas, Kiprijanovič, Oleg, Liberis, Juozapas
Format Journal Article
LanguageEnglish
Published 01.01.2016
Online AccessGet full text

Cover

More Information
Summary:Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated as ~1.5×10 7 cm/s and is ~50% higher as compared with the standard AlN-spacer GaN 2DEG channel. The HFET with the pristine 2DEG density of 1.75×10 13 cm –2 confined in the coupled channel demonstrates the optimal frequency performance in terms of electron velocity at a relatively low gate bias of V GS = –1.75 V. These results are consistent with the ultra-fast decay of hot phonons.
ISSN:1648-8504
2424-3647
DOI:10.3952/physics.v56i4.3418