Investigation in the role of hydrogen on the properties of diamond films grown using Ar/H2/CH4 microwave plasma

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Bibliographic Details
Published inDiamond and related materials Vol. 20; no. 2; pp. 232 - 237
Main Authors SANKARAN, Kj, JOSEPH, P. T, CHEN, H. C, TAI, N. H, LIN, I. N
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.02.2011
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Electron, ion, and scanning probe microscopy
Exact sciences and technology
Fullerenes and related materials; diamonds, graphite
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Specific materials
Structure and morphology; thickness
Structure of solids and liquids; crystallography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
Grain size
Grain boundaries
Methane
Crystal defects
Electronic properties
Grain growth
Synthetic diamond
Diamond structure
Electron field emission
Optimization
Granular structure
Surface structure
Thin films
Ultrananocrystalline diamond
Growth mechanism
Microwave discharge
Diamond films
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ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2010.12.018