Ion Implantation: Nanoporous Germanium
The formation of amorphous thin surface layers of nanoporous Ge with various morphologies during the low-energy high-dose implantation by metal ions of different masses, namely 63 Cu + , 108 Ag + , and 209 Bi + , on single-crystal c -Ge substrates was experimentally demonstrated using high-resolutio...
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Published in | Surface investigation, x-ray, synchrotron and neutron techniques Vol. 18; no. 4; pp. 834 - 840 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.08.2024
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | The formation of amorphous thin surface layers of nanoporous Ge with various morphologies during the low-energy high-dose implantation by metal ions of different masses, namely
63
Cu
+
,
108
Ag
+
, and
209
Bi
+
, on single-crystal
c
-Ge substrates was experimentally demonstrated using high-resolution scanning electron microscopy. The structure of the obtained nanoporous Ge layers was studied using backscattered electron diffraction. Under irradiation with low-energy ions, such as
63
Cu
+
and
108
Ag
+
, needle-like nanostructures constituting a nanoporous thin Ge layer form on the surface of
c
-Ge. However when employing havier
209
Bi
+
, the implanted layer consists of densely packed nanowires. At high ion-irradiation energies, the morphology of the thin surface layers of nanoporous Ge undergoes a sequential transformation in shape from three-dimensional reticulated to spongy as the mass of the implanted ions increased. Such a spongy structure was formed by sparse individual intertwining nanowires. The general potential mechanisms for pore formation in Ge during low-energy high-dose ion implantation are discussed, including the cluster–vacancy mechanism, local thermal microexplosion, and localized heating accompanied by surface melting with effective sputtering. |
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ISSN: | 1027-4510 1819-7094 |
DOI: | 10.1134/S1027451024700526 |