Effect of growth temperature on the microstructural properties of 0.95Na0.5Bi0.5TiO3–0.05BaTiO3 films prepared on MgO (0 0 1) substrates
•Lead-free (Bi0.5Na0.5)TiO3-BaTiO3 films epitaxially grow on MgO substrates.•Growth temperature affects the film/substrate orientation relationship.•Zigzag-type planar defects form in the films at high growth temperature.•Periodic dislocation arrays release film-substrate misfit strain. Lead-free 0....
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Published in | Materials letters Vol. 259; p. 126847 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
15.01.2020
Elsevier BV |
Subjects | |
Online Access | Get full text |
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Summary: | •Lead-free (Bi0.5Na0.5)TiO3-BaTiO3 films epitaxially grow on MgO substrates.•Growth temperature affects the film/substrate orientation relationship.•Zigzag-type planar defects form in the films at high growth temperature.•Periodic dislocation arrays release film-substrate misfit strain.
Lead-free 0.95(Na0.5Bi0.5)TiO3–0.05BaTiO3 (NBT-BT) piezoelectric films have been successfully fabricated by high-pressure magnetron sputtering deposition technique on (0 0 1)-oriented MgO substrates at 800 °C and 900 °C, respectively. By advanced electron microscopy techniques, the orientation relationship of (0 0 1)[1 1 0]film//(0 0 1)[1 0 0]MgO and (0 0 1)[1 0 0]film//(0 0 1)[1 0 0]MgO is determined for the NBT-BT/MgO heterostructures prepared at 800 °C and 900 °C, respectively. In comparison, a high density of zigzag-typed planar defects appear in the film prepared at 900 °C. At the semi-coherent interfaces, periodic dislocation arrays form to relax the film-substrate misfit strain. In particular, the formation of both (a/2) 〈0 1 0〉 -type and (a/2) 〈011-〉 -type interfacial dislocations facilitates the growth of NBT-BT films on rough MgO substrates at 900 °C. Our findings indicate that the mode of film growth and microstructure for NBT-BT films prepared on MgO substrates can be tuned by the growth temperature. |
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ISSN: | 0167-577X 1873-4979 |
DOI: | 10.1016/j.matlet.2019.126847 |