Properties of bridge-type weak-link device with YBCO thin film
Thin films of YBaCuO were deposited onto polished MgO(100) substrates by a dc hollow cathode sputtering with stoichiometric YBa2Cu3Oz targets. The films of Tc zero with a good c‐axis orientation were fabricated successfully under the condition of a sputtering gas Ar + 5% o2, sputter‐pressure 820 m t...
Saved in:
Published in | Electronics & communications in Japan. Part 2, Electronics Vol. 76; no. 8; pp. 110 - 116 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York
Wiley Subscription Services, Inc., A Wiley Company
1993
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Thin films of YBaCuO were deposited onto polished MgO(100) substrates by a dc hollow cathode sputtering with stoichiometric YBa2Cu3Oz targets. The films of Tc zero with a good c‐axis orientation were fabricated successfully under the condition of a sputtering gas Ar + 5% o2, sputter‐pressure 820 m torr, and substrate temperature during deposition 700°C. The present study aims to realize a variable thickness bridge (VTB) device with thin bridge portions.
VTB devices were fabricated by using photolithography, oblique incident evaporation of Al, and fine fabrication of 85 to 410 nm by low‐energy ion‐beam etching. Measurements were made for a frequency from microwave (9.67 GHz) to millimeter wave (94 GHz). Those devices were found to respond properly to a millimeter wave. |
---|---|
Bibliography: | istex:568708BD860BD44576FB9772187D929E3D2316E5 ArticleID:ECJB4420760811 ark:/67375/WNG-NXCMZ7N1-V superconducting films, and its device application. He is a member of the Institute of Electrical Engineers, the Applied Physical Society of Japan, and APS. Toshinari Goto received a B.E. and a Ph.D. in Electro‐Communication from Tohoku University in 1961 and 1967, respectively. Later, he obtained a Ph.D. He became Lecturer and Professor in 1967 and 1983, respectively. He has been engaged in research on thin‐film fabrication by sputtering, superconducting thin films, Josephson device, high Chan‐Hoon Park received a B.E. in Electrical Engineering from Nihon University in 1988 and in 1990 an M.E. from the University of Electro‐Communications, where he is currently in the doctoral program working on superconducting Josephson junctions. He is a member of the Applied Physical Society of Japan and the Korean Electrical Engineering Society. Tadayuki Kobayashi received a B.E. and an M.E. in Communication Engineering from the University of Electro‐Communications in 1968 and 1971, respectively. He received a Ph.D. from Tohoku University in 1978. He became an Associate Professor after having worked at Sendai Institute of Technology. He has been working on superconducting devices and high Tc superconducting thin films. He is a member of the Applied Physical Society of Japan. Tc |
ISSN: | 8756-663X 1520-6432 |
DOI: | 10.1002/ecjb.4420760811 |