Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

• Published in: Chinese physics letters Vol. 34; no. 11; pp. 98 - 101
• Main Author: 莫晓帆;徐尉宗;陆海;周东;任芳芳;陈敦军;张荣;郑有炓
• Format: Journal Article
• Language: English
• Published: 01.11.2017

Design, fabrication and characterizations of GaN-based blue micro light emitting diode （LED） arrays are reported. The GaN micro-LED array consists of 320×256 pixels with a pitch size of 30μm. Each pixel is 25×25μm^2 in size, which is designed for backside emission and high density flip-chip packagin...