Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

Design, fabrication and characterizations of GaN-based blue micro light emitting diode （LED） arrays are reported. The GaN micro-LED array consists of 320×256 pixels with a pitch size of 30μm. Each pixel is 25×25μm^2 in size, which is designed for backside emission and high density flip-chip packagin...

Full description

Saved in:
Bibliographic Details
Published inChinese physics letters Vol. 34; no. 11; pp. 98 - 101
Main Author 莫晓帆;徐尉宗;陆海;周东;任芳芳;陈敦军;张荣;郑有炓
Format Journal Article
LanguageEnglish
Published 01.11.2017
Online AccessGet full text

Cover

More Information
Summary:Design, fabrication and characterizations of GaN-based blue micro light emitting diode （LED） arrays are reported. The GaN micro-LED array consists of 320×256 pixels with a pitch size of 30μm. Each pixel is 25×25μm^2 in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.
Bibliography:Design, fabrication and characterizations of GaN-based blue micro light emitting diode （LED） arrays are reported. The GaN micro-LED array consists of 320×256 pixels with a pitch size of 30μm. Each pixel is 25×25μm^2 in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.
11-1959/O4
Xiao-Fan Mo, Wei-Zong Xu, Hai Lu, Dong Zhou, Fang-Fang Ren, Dun-Jun Chen, Rong Zhang, You-Dou Zheng （Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093）
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/11/118102