InAsyP1―y metamorphic buffer layers on InP substrates for mid-IR diode lasers

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Bibliographic Details
Published inJournal of crystal growth Vol. 312; no. 8; pp. 1165 - 1169
Main Authors KIRCH, Jeremy, GARROD, Toby, MEYER, Jerry R, KUAN, Tung-Sheng, KIM, Sangho, PARK, Joo H, SHIN, Jae C, MAWST, L. J, KUECH, T. F, SONG, X, BABCOCK, S. E, VURGAFTMAN, Igor
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.04.2010
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other topics in nanoscale materials and structures
Photoluminescence
Physics
Vapor phase epitaxy; growth from vapor phase
A3. Quantum wells
Confinement
B1. Phosphides
Photoluminescence
Laser diodes
Optical microscopy
Light emission
Semiconductor lasers
B3. Laser diodes
Buffer layer
Scanning electron microscopy
B1. Antimonides
Phosphides
Quantum wells
Digital simulation
Secondary ion mass spectrometry
Indium Arsenides phosphides
Indium arsenides
III-V compound
Trapping
Transmission electron microscopy
MOVPE method
A3. Organometallic vapor phase epitaxy
Nanostructured materials
Heterostructures
III-V semiconductors
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.12.057