Growth and characterization of Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films using solid source MOCVD techniques

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Bibliographic Details
Published inJournal of crystal growth Vol. 226; no. 2-3; pp. 247 - 253
Main Authors LEE, S. Y, CUSTODIO, M. C. C, LIM, Han-Jin, FEIGELSON, R. S, MARIA, J.-P, TROLIER-MCKINSTRY, S
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.06.2001
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Other inorganic semiconductors
Physics
Structure and morphology; thickness
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
RBS
Inorganic compounds
Epitaxy
Lead titanates
Transition element compounds
Oxides
Lead oxides
Titanates
Perovskites
Crystal growth from vapors
XRD
Experimental study
MOCVD
Precursor
Characterization
Thin films
Ferroelectric materials
Niobium oxides
Magnesium oxides
Heteroepitaxy
IV characteristic
Permittivity
Hysteresis
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ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00796-5