GaN on Si HEMT with 65% power added efficiency at 10 GHz
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Published in | Electronics letters Vol. 46; no. 13; pp. 946 - 947 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Stevenage
Institution of Engineering and Technology
24.06.2010
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Subjects | |
Online Access | Get full text |
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ISSN: | 0013-5194 1350-911X |
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DOI: | 10.1049/el.2010.1284 |