Conductivity tensor in semiconductor with the presence of a laser field and an electromagnetic wave field for the case of scattering on ionized impurities

Abstract There are a lot of studies on semiconductors and in semiconductors also appear many dynamic effects, from the research results that have many applications in science and technology. Conductivity tensor is a familiar concept in physics in general and semiconductors in particular, but researc...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 1854; no. 1; p. 12006
Main Author Ngoc, Hoang Van
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.04.2021
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Summary:Abstract There are a lot of studies on semiconductors and in semiconductors also appear many dynamic effects, from the research results that have many applications in science and technology. Conductivity tensor is a familiar concept in physics in general and semiconductors in particular, but research on scattering on ionized impurities is still limited. This paper presents the influence of laser field and electromagnetic waves on conductivity tensor for the case of scattering on ionized impurities in semiconductor. The particle system is placed in an electromagnetic wave field and a laser field. Using quantum kinetic equations for electrons in semiconductor under the action of an electromagnetic wave field, a laser field, the conductivity tensor is calculated with case of scattering on ionized impurities. Conductivity tensor depends on the frequency of the laser field, the laser field amplitude, the electromagnetic wave frequency and typical parameters for semiconductor system. With different frequency bands, the dependence of tensor conductivity on the frequency is different, and the special conductivity tensor is strongly dependent on the amplitude of the laser field but depends very little on its frequency. The results will be plotted and discussed with GaAs semiconductor case and compared with studies for different scattering cases.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1854/1/012006