Achieving Low Doped (<10 16 ) GaN with Large Breakdown Voltages (~1000 V)

Point defects in the GaN cause premature breakdown in GaN Schottky diodes at least to the same extent as dislocations do. The most likely cause is impact ionization of deep acceptors. A primary deep acceptor in MOCVD-grown GaN is C. Another is a Ga vacancy, which is likely to be the primary deep acc...

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Published inECS transactions Vol. 50; no. 3; pp. 297 - 305
Main Authors Tompkins, Randy P., Smith, J. R., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Jones, Kenneth A., Metzger, R., Leach, Jacob, Suvana, Puneet, Tungare, Mihir, Shahedipou-Sandvik, Fatemeh
Format Journal Article
LanguageEnglish
Published 15.03.2013
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Summary:Point defects in the GaN cause premature breakdown in GaN Schottky diodes at least to the same extent as dislocations do. The most likely cause is impact ionization of deep acceptors. A primary deep acceptor in MOCVD-grown GaN is C. Another is a Ga vacancy, which is likely to be the primary deep acceptor in HVPE-grown material. Lower net carrier concentrations, and therefore larger breakdown voltages, can be achieved in the HVPE material.
ISSN:1938-5862
1938-6737
DOI:10.1149/05003.0297ecst