Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

• Published in: Journal of physics. D, Applied physics Vol. 57; no. 41; pp. 415104 - 415109
• Main Authors: Luo, Ling, Wu, Nengtao, Xing, Zhiheng, Li, Shanjie, Zeng, Fanyi, Cao, Ben, Wu, Changtong, Li, Guoqiang
• Format: Journal Article
• Language: English
• Published: IOP Publishing 18.10.2024
• Subjects: breakdown voltage; electric field modulation; high electron mobility transistors (HEMTs); specific on-resistance
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/ad61f6

Abstract In this letter, a depletion-mode GaN high electron mobility transistors (GaN HEMTs) with high breakdown voltage and low on-resistance are designed and experimentally demonstrated. It combines the gate field plate and partial unintentionally doped GaN (u-GaN) cap layer ( gate field plate and partial u-GaN cap HEMTs: GPU-HEMTs ) to co-modulate the surface electric field distribution, which results in the electric field peak being far away from the gate edge, thus improving the breakdown voltage and decreasing the on-resistance. The optimized GPU-HEMTs exhibit a larger output current ( I DS ) of 495 mA mm −1 and a correspondingly smaller specific on-resistance of 4.26 mΩ·cm 2 . Meanwhile, a high breakdown voltage of 1044 V at I DS = 1 mA mm −1 compared to the conventional GaN HEMTs of 633 V was obtained. This approach is highly effective in simultaneously optimizing the breakdown voltage and the specific on-resistance of GaN HEMTs, while maintaining a large output current.