Diaphragmless pressure sensor

• Published in: Sensors and actuators. A. Physical. Vol. 113; no. 3; pp. 350 - 354
• Main Authors: Krivorotov, N.P., Svinolupov, Yu.G., Izaak, T.I., Bychkov, V.V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 16.08.2004
• Subjects: Multiplicative microelectronic pressure sensor; Pressure sensor; Semiconductor sensor; Multiplicative microelectronic pressure sensor; Semiconductor sensor; Pressure sensor
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/j.sna.2004.03.073

The new principle of construction pressure sensors is considered. Traditional technology consists of a deep anisotropic etching of silicon substrate with the object of creating the thin diaphragm and following fabrication tensoresistive stripes at diaphragm periphery. The sensors with the diaphragm has not enough response speed and are characterized by great variation of sensitivity. New technology uses only shallow etching of silicon wafer (<1 μm). Original sensor includes a hard concentrator of pressure, that connected with the hard tensoresistive stripes. The sensor sensitivity is determined by the ratio of the concentrator square and the square of tensoresistive stripes, that are reproduced by lithography. Sensors with hard concentrators of pressure have miniature dimensions (≤1 mm), broad frequency band (up to ∼300 kHz) and small variation of sensitivity (<5%).