Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0⩽x⩽0.07) magnetic semiconductors

• Published in: Current applied physics Vol. 10; no. 1; pp. 333 - 336
• Main Authors: Chandradass, J., Balasubramanian, M., Kumar, Shalendra, Bae, Dong-Sik, Kim, Ki Hyeon
• Format: Journal Article
• Language: English
• Published: 한국물리학회 01.01.2010
• Subjects: 물리학
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2009.06.018

Observation of room temperature ferromagnetism in Fe doped In2O3 samples (In1-xFex)2O3 (0 6 x 6 0.07)prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In2O3 lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25.36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In2O3 sample. The highest remanence magnetization moment (6.624 × 10-4 emu/g) is reached in the sample with x = 0.03. KCI Citation Count: 9