Determination of the refractive index of In0.53Al0.11Ga0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry

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Bibliographic Details
Published inApplied surface science Vol. 69; no. 1-4; pp. 355 - 358
Main Authors DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier Science 02.05.1993
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Aluminium arsenides
Thin films
Gallium arsenides
Inorganic compounds
Refractive index
Optical properties
Experimental study
Quaternary compounds
Indium arsenides
Ellipsometry
III-V semiconductors
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ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(93)90533-H