Study of frequency dispersion of capacitance-voltage characteristics of boron-doped diamond Schottky diodes

Abstract A single-crystal diamond doped with boron was studied in this work. For electrical measurements an array of Schottky contacts and a large Ohmic contact were fabricated. The capacitance-voltage (C-V) characteristics of the sample were obtained experimentally in wide temperature range and mod...

Full description

Saved in:
Bibliographic Details
Published inIOP conference series. Earth and environmental science Vol. 678; no. 1; p. 12047
Main Authors Solomnikova, Anna, Tylintsev, Maksim, Lukashkin, Vadim
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2021
Subjects
Boron
Capacitance
Capacitance-voltage characteristics
Contact resistance
Current carriers
Diamonds
Dispersion
Electric contacts
Electrical measurement
Frequency ranges
High temperature
Low temperature
Schottky diodes
Single crystals
Voltage
Online AccessGet full text

Cover

More Information
Summary:Abstract A single-crystal diamond doped with boron was studied in this work. For electrical measurements an array of Schottky contacts and a large Ohmic contact were fabricated. The capacitance-voltage (C-V) characteristics of the sample were obtained experimentally in wide temperature range and modeled. At high temperature (445 K) the slope of the C-V characteristics does not depend on the test signal frequency. The calculated concentration of free charge carriers is the same for all frequencies within the experimental error and approximately corresponds to the total boron concentration. At low temperatures (235 K), there is a significant difference in capacitances measured at different frequencies, the calculated concentration varies from 5·1017 cm-3 to 5·1015 cm-3 in the available frequency range. The reasons for the frequency dispersion of capacitance-voltage characteristics of boron-doped diamond diodes are discussed.
ISSN:1755-1307
1755-1315
DOI:10.1088/1755-1315/678/1/012047