Ga2O3 nanowires prepared by physical evaporation

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Bibliographic Details
Published inSolid state communications Vol. 109; no. 11; pp. 677 - 682
Main Authors ZHANG, H. Z, KONG, Y. C, WANG, Y. Z, DU, X, BAI, Z. G, WANG, J. J, YU, D. P, DING, Y, HANG, Q. L, FENG, S. Q
Format Journal Article
LanguageEnglish
Published Oxford Elsevier 01.03.1999
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Crystal defects
Inorganic compounds
Space groups
Binary compounds
XRD
Evaporation
Nanostructures
Experimental study
High-resolution methods
Gallium oxides
Monocrystals
Wires
Growth mechanism
Physical vapor deposition
Atomic structure
TEM
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More Information
ISSN:0038-1098
1879-2766
DOI:10.1016/s0038-1098(99)00015-0