IIIA-6 MOVPE grown GaAlAs/GaAs DH devices operating as laser diodes and bipolar transistors for optoelectronic integration

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 34; no. 11; p. 2364
Main Authors Temmyo, J., Hasumi, Y., Kozen, A.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1987
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Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23267