Nanoelectromechanical (NEM) Devices for Logic and Memory Applications

Recent research on NEM devices for logic and memory applications has been reviewed from the perspective of monolithic 3D (M3D) heterogeneous integration. In addition, the backgrounds of M3D CMOS-NEM reconfigurable logic (RL) circuits are described in detail. Moreover, 65-nm process based M3D CMOS-NE...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 22; no. 3; pp. 188 - 197
Main Authors Kwon, Hyug-Su, Choi, Woo-Young
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.06.2022
Subjects
전기공학
nanoelectromechanical (NEM) memory switch
CMOS
field programmable gate array (FPGA)
monolithic three-dimensional (M3D) integration
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Summary:Recent research on NEM devices for logic and memory applications has been reviewed from the perspective of monolithic 3D (M3D) heterogeneous integration. In addition, the backgrounds of M3D CMOS-NEM reconfigurable logic (RL) circuits are described in detail. Moreover, 65-nm process based M3D CMOS-NEM RL circuits were proposed. It is predicted that proposed M3D CMOS-NEM RL circuits will exhibit 4.6x higher chip density, 2.3x higher operation frequency and 9.3x lower power consumption than CMOS-only ones (tri-state buffer case) for tile-to-tile operation. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2022.22.3.188