Inductorless Broadband Transimpedance Amplifier for 25-Gb/s NRZ and 50-Gb/s PAM-4 Operations in a 90-nm CMOS Technology

• Published in: Journal of semiconductor technology and science Vol. 21; no. 5; pp. 304 - 310
• Main Authors: Jou, Jau-Ji, Shih, Tien-Tsorng, Peng, Chih-Chen, Hsu, Hao-Wen, Ye, Xuan-Yi
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.10.2021
• Subjects: 전기공학; Transimpedance amplifier (TIA); four-level pulse amplitude modulation (PAM-4); complementary metal-oxide-semiconductor (CMOS); optical receiver; high-speed transmission
• ISSN: 1598-1657; 2233-4866
• DOI: 10.5573/JSTS.2021.21.5.304

In this study, an inductorless broadband transimpedance amplifier (TIA) is implemented using TSMC 90-nm complementary metal-oxide-semiconductor (CMOS) technology. A regulated cascode circuit with low input impedance is used as the input stage of the TIA. The core amplifier is a fully differential amplifier with active feedback. The output stage of the TIA is an equalizer based on a differential amplifier with a source degenerated resistor and capacitor. The TIA has a bandwidth of 24.8 GHz and good linearity. In the TIA chip testing, clear 25-Gb/s nonreturn to zero and 50-Gb/s four-level pulse amplitude modulation eye diagrams can be observed. KCI Citation Count: 0