Structural, magnetic and electronic transport properties of MnxGe1¯x/Ge(001) films grown by MBE at 350 °C

• Published in: Surface science Vol. 601; no. 13; pp. 2632 - 2635
• Main Authors: MORRESI, L, AYOUB, J. P, PINTO, N, FICCADENTI, M, MURRI, R, RONDA, A, BERBEZIER, I, D'ORAZIO, F, LUCARI, F
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 01.07.2007; Amsterdam; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Physics; Magnetic films; Transmission electron microscopy; Semiconducting films; Electronic conductivity; Transition elements; Molecular beam epitaxy; Germanium; Transport processes; Electronic transport measurement; TEM; Film growth; Manganese