Structural, magnetic and electronic transport properties of MnxGe1¯x/Ge(001) films grown by MBE at 350 °C

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Bibliographic Details
Published inSurface science Vol. 601; no. 13; pp. 2632 - 2635
Main Authors MORRESI, L, AYOUB, J. P, PINTO, N, FICCADENTI, M, MURRI, R, RONDA, A, BERBEZIER, I, D'ORAZIO, F, LUCARI, F
Format Conference Proceeding Journal Article
LanguageEnglish
Published Lausanne Elsevier Science 01.07.2007
Amsterdam
New York, NY
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Physics
Magnetic films
Transmission electron microscopy
Semiconducting films
Electronic conductivity
Transition elements
Molecular beam epitaxy
Germanium
Transport processes
Electronic transport measurement
TEM
Film growth
Manganese
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ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2006.11.077