Influence of In-doping on resistivity of chemical bath deposited SnS films

SnS and SnS:In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS:In films were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. Energy dispersive spectroscopy (EDS) showed the existence of In...

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Bibliographic Details
Published inJournal of Shanghai University Vol. 11; no. 4; pp. 403 - 406
Main Authors Ge, Yan-hui, Guo, Yu-ying, Shi, Wei-min, Qiu, Yong-hua, Wei, Guang-pu
Format Journal Article
LanguageEnglish
Chinese
Published 01.08.2007
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Summary:SnS and SnS:In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS:In films were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. Energy dispersive spectroscopy (EDS) showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS:In films were evaluated from the optical transmission spectra.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1007-6417
1863-236X
DOI:10.1007/s11741-007-0417-1