Growth of magnetic materials and structures on Si(O 0 1) substrates using Co2Si as a template layer

• Published in: Applied surface science Vol. 254; no. 19; pp. 6040 - 6047
• Main Authors: OLIVE MENDEZ, S, LE THANH, V, RANGUIS, A, DERRIEN, J
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 30.07.2008; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Physics; Multilayers; Magnetic epitaxial layers; Template layer,Multi-domain epitaxial layer,Magnetic tunnel junction,Solid phase epitaxy,Reaction deposition epitaxy; Magnetic structure; Tunnel junction; Magnetic materials; Silicon; Solid-phase epitaxy; Film growth
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.02.193

We report in this paper the use of Co2Si silicide as a template layer for the integration of magnetic materials and structures on silicon substrate. By undertaking Co deposition on silicon at a temperature of about 300 deg C, we show that it is possible to obtain a smooth and epitaxial Co2Si layer, which can act as a template layer preventing the reaction between Co and other transition metals with silicon. Two examples of over-growth of magnetic materials and structures on this template layer will be presented: growth of ferromagnetic Co layers and of magnetic tunnel junctions (Co(Fe)/AlOx/NiFe).