Metalorganic chemical vapor deposition growth of GaAs on annealed Si in H2
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| Published in | Journal of crystal growth Vol. 145; no. 1-4; pp. 353 - 357 |
|---|---|
| Main Authors | , , , |
| Format | Conference Proceeding Journal Article |
| Language | English |
| Published |
Amsterdam
Elsevier
01.12.1994
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| Subjects | |
| Online Access | Get full text |
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| Author | TACHIKAWA, A AIGO, T MORITANI, A JONO, A |
|---|---|
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| EISSN | 1873-5002 |
| EndPage | 357 |
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| Issue | 1-4 |
| Keywords | Temperature dependence Gallium arsenides Inorganic compounds Semiconductor materials Organometallic compounds Surfaces Binary compounds Crystallinity Crystal growth from vapors Experimental study Substrates CVD Thin films Morphology Pretreatment Thermal annealing Preheating |
| Language | English |
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| References | Bender (10.1016/0022-0248(94)91075-8_BIB5) 1994; 75 Akiyama (10.1016/0022-0248(94)91075-8_BIB1) 1984; 23 Meyerson (10.1016/0022-0248(94)91075-8_BIB6) 1990; 57 Tachikawa (10.1016/0022-0248(94)91075-8_BIB3) 1993; 32 Fang (10.1016/0022-0248(94)91075-8_BIB4) 1991; 58 Takagi (10.1016/0022-0248(94)91075-8_BIB2) 1992; 259 |
| References_xml | – volume: 259 start-page: 305 year: 1992 ident: 10.1016/0022-0248(94)91075-8_BIB2 publication-title: Mater. Res. Soc. Symp. Proc. doi: 10.1557/PROC-259-305 contributor: fullname: Takagi – volume: 57 start-page: 1034 year: 1990 ident: 10.1016/0022-0248(94)91075-8_BIB6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.103557 contributor: fullname: Meyerson – volume: 58 start-page: 1887 year: 1991 ident: 10.1016/0022-0248(94)91075-8_BIB4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.105063 contributor: fullname: Fang – volume: 23 start-page: L843 year: 1984 ident: 10.1016/0022-0248(94)91075-8_BIB1 publication-title: Jap. J. Appl. Phys. doi: 10.1143/JJAP.23.L843 contributor: fullname: Akiyama – volume: 75 start-page: 1207 year: 1994 ident: 10.1016/0022-0248(94)91075-8_BIB5 publication-title: J. Appl. Phys. doi: 10.1063/1.356478 contributor: fullname: Bender – volume: 32 start-page: L1252 year: 1993 ident: 10.1016/0022-0248(94)91075-8_BIB3 publication-title: Jap. J. Appl. Phys. doi: 10.1143/JJAP.32.L1252 contributor: fullname: Tachikawa |
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| SubjectTerms | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) |
| Title | Metalorganic chemical vapor deposition growth of GaAs on annealed Si in H2 |
| Volume | 145 |
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