Metalorganic chemical vapor deposition growth of GaAs on annealed Si in H2

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Bibliographic Details
Published inJournal of crystal growth Vol. 145; no. 1-4; pp. 353 - 357
Main Authors JONO, A, TACHIKAWA, A, AIGO, T, MORITANI, A
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.12.1994
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Temperature dependence
Gallium arsenides
Inorganic compounds
Semiconductor materials
Organometallic compounds
Surfaces
Binary compounds
Crystallinity
Crystal growth from vapors
Experimental study
Substrates
CVD
Thin films
Morphology
Pretreatment
Thermal annealing
Preheating
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)91075-8