Semiconductor analog of scanning cathode-ray tube

A silicon structure in which a photoexcited electron beam is electrically deflected over an included angle of 22° has been used to detect a one-dimensional optical image extending 100 µm. Five points of resolution were obtained; this is close to a theoretical estimate based on diffusion-controlled b...

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Bibliographic Details
Published inProceedings of the IEEE Vol. 59; no. 2; pp. 318 - 319
Main Authors Bartelink, D.J., Persky, G., Speeney, D.V.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1971
Subjects
Cathode ray tubes
Electron beams
Electron optics
Face detection
Metallization
Optical detectors
Optical sensors
P-i-n diodes
Silicon
Streaming media
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Summary:A silicon structure in which a photoexcited electron beam is electrically deflected over an included angle of 22° has been used to detect a one-dimensional optical image extending 100 µm. Five points of resolution were obtained; this is close to a theoretical estimate based on diffusion-controlled beam spreading.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1971.8161