(Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization

Reliability and cost are the major factors facing large scale adoption of SiC power devices. The push to reduce costs with 150mm diameter wafers comes with lower crystal quality and higher defects, thus prompting reliability concerns. In this work we present ways for comprehensive detection and scre...

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Bibliographic Details
Published inECS transactions Vol. 69; no. 11; pp. 29 - 32
Main Authors Das, Hrishikesh, Sunkari, Swapna, Domeij, Martin, Konstantinov, Andrei, Allerstam, Fredrik, Neyer, Thomas
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 21.09.2015
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Summary:Reliability and cost are the major factors facing large scale adoption of SiC power devices. The push to reduce costs with 150mm diameter wafers comes with lower crystal quality and higher defects, thus prompting reliability concerns. In this work we present ways for comprehensive detection and screening of bipolar degradation causing defects and other crystal defects to alleviate reliability concerns.
ISSN:1938-5862
1938-6737
DOI:10.1149/06911.0029ecst