InP-based HIGFETs for complementary circuits

The authors report p-channel heterostructure FETs fabricated on InP substrates, as well as advanced results on submicrometer n-channel HIGFETs. P-HIGFETs with 1- mu m nominal gate lengths were made using lattice-matched InGaAs channels and InAlAs barriers. Threshold voltage and threshold uniformity...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 36; no. 11; p. 2616
Main Authors Feuer, M.D., He, Y., Tennant, D.M., Shunk, S.C., Brown-Goebeler, K.F., Behringer, R.E., Chang, T.Y.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1989
Subjects
Capacitance
Circuits
Cutoff frequency
Electron mobility
HEMTs
Indium compounds
Indium gallium arsenide
Indium phosphide
MODFETs
Threshold voltage
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Summary:The authors report p-channel heterostructure FETs fabricated on InP substrates, as well as advanced results on submicrometer n-channel HIGFETs. P-HIGFETs with 1- mu m nominal gate lengths were made using lattice-matched InGaAs channels and InAlAs barriers. Threshold voltage and threshold uniformity were studied as a function of gate length for n-channel InGaAs/InAlAs HIGFETs in the range from 0.4 to 1.2 mu m. Microwave characterization of several n-HIGFET wafers with gate lengths down to 0.3 mu m yielded cutoff frequencies of up to 115 GHz, corrected for pad capacitance, with an effective drift velocity of 2.0*10/sup 7/ cm/s.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.43729