The Characterization of Bottom-gate Thin Film Transistors adapted Nanocrystalline Silicon as Active Layer by Catalytic CVD at Low Temperature

The nanocrystalline silicon bottom-gate thin film transistor (nc-si TFT) should improve on formed amorphous incubation layers at the onset of deposition because these layers deteriorate the performance of the transistor. We attempted modulation of hydrogen dilution ratio to achieve both the minimal...

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Published inECS transactions Vol. 25; no. 3; pp. 259 - 262
Main Authors Lee, Youn-Jin, Lee, Kyoung-Min, Hwang, Jae-Dam, No, Kil-Sun, Yoon, Kap Soo, Yang, Sung Hoon, Won, Sunghwan, Sok, Junghyun, Park, Kyoungwan, Hong, Wan-Shick
Format Journal Article
LanguageEnglish
Published 01.01.2009
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Summary:The nanocrystalline silicon bottom-gate thin film transistor (nc-si TFT) should improve on formed amorphous incubation layers at the onset of deposition because these layers deteriorate the performance of the transistor. We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3204414