Evidence for self-organization processes in PbTe-Bi2Te3 semiconductor solid solutions

The dependences of unit cell parameter, x-ray diffraction line width B, and microhardness H on the composition of PbTe-Bi2Te3 (0–10 mol% Bi2Te3) semiconductor alloys, subjected to different types of heat treatment, were obtained. In the concentration ranges ∼0.5–1.5 and 3–4 mol% Bi2Te3 within the ho...

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Published inJournal of materials research Vol. 26; no. 13; pp. 1627 - 1633
Main Authors Rogacheva, Elena, Vodorez, Olga, Pinegin, Vladimir, Nashchekina, Olga
Format Journal Article
LanguageEnglish
Published New York, USA Cambridge University Press 14.07.2011
Springer International Publishing
Springer Nature B.V
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Summary:The dependences of unit cell parameter, x-ray diffraction line width B, and microhardness H on the composition of PbTe-Bi2Te3 (0–10 mol% Bi2Te3) semiconductor alloys, subjected to different types of heat treatment, were obtained. In the concentration ranges ∼0.5–1.5 and 3–4 mol% Bi2Te3 within the homogeneity region of PbTe (0–6 mol% Bi2Te3), anomalous constancy or decrease in B and H was observed. A long room temperature aging leads to a more distinct manifestation of these effects. It is suggested that the observed peculiarities in the concentration dependences of the properties are connected with percolation effects and self-organization processes in the solid solution.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2011.165