The Effect of Interfacial Contamination on Antiphase Domain Boundary Formation in GaAs on Si(100)

The suppression of defects such as antiphase domain boundaries (APBs) is a key challenge in the effort to integrate III-V compound semiconductor devices on Si. The formation of APBs naturally arises from growing a polar material on a nonpolar substrate. Surface contamination present on the substrate...

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Bibliographic Details
Published inECS transactions Vol. 66; no. 7; pp. 51 - 56
Main Authors Barrett, Caleb Shuan Chia, Lind, Aaron Gregg, Bao, Xinyu, Ye, Zhiyuan, Ban, Keun-Yong, Martin, Patrick, Sanchez, Errol, Jones, Kevin Scott
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 10.04.2015
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Summary:The suppression of defects such as antiphase domain boundaries (APBs) is a key challenge in the effort to integrate III-V compound semiconductor devices on Si. The formation of APBs naturally arises from growing a polar material on a nonpolar substrate. Surface contamination present on the substrate prior to growth can also disrupt the ordering of atoms in an epitaxial layer and lead to extended defects. In this study, the amount of contamination on Si(100) wafers was varied by approximately an order of magnitude to investigate the effect on formation of APBs in an epitaxial GaAs film grown by MOCVD. The results indicate a direct correlation between the interfacial oxygen and carbon impurity dose and the APB density.
ISSN:1938-5862
1938-6737
DOI:10.1149/06607.0051ecst