Enhanced ∼2 μm emission in Tm3+ doped bismuth glasses by Ga2O3

• Published in: Infrared physics & technology Vol. 137; p. 105178
• Main Authors: Tian, Ming, Cong, Yuxuan, Zhou, Dechun, Ban, Yumeng, Liao, Ya, He, Zelin
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2024
• Subjects: 2 μm emission; Bismuth glass; Ga2O3 modulation; Gain amplification; Bismuth glass; Ga2O3 modulation; Gain amplification; 2 μm emission
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/j.infrared.2024.105178

•The ∼ 2 μm emission intensity of Tm3+ doped bismuth glass can be enhanced by the introduction of Ga2O3.•Bismuth glasses process excellent thermal stability for fiber drawing.•BBG3 has a broad emission band (Δλeff = 251.42 nm) and gain coefficient (10.89 cm−1). The influence of B2O3 ↔ Ga2O3 substitution on the ∼ 2 μm emission and gain properties of Tm3+-doped Bi2O3-B2O3-BaF2 glasses was investigated by absorption, fluorescence, and Raman spectroscopy. It is shown that the thermal stability was enhanced as Ga2O3 replaces the B2O3 component gradually, while [GaO4] and [BO4] units enter the network. When the concentration of Ga2O3 reaches 8 mol% (BBG3 glass), the maximum gain coefficient at ∼ 2 μm reaches 10.89 cm−1, which is larger than other glasses. Enhanced ∼ 2 μm emission and gain properties can be obtained by content Ga2O3 with the choice of 15 mol%. The WET of Tm3+ was calculated to reach 2051.7 × 10-20 cm3/s, indicating that an effective cross-relaxation process can be obtained. The Tm3+ doped bismuth glasses show potential as ∼ 2 μm fiber amplifiers.