Enhanced ∼2 μm emission in Tm3+ doped bismuth glasses by Ga2O3
•The ∼ 2 μm emission intensity of Tm3+ doped bismuth glass can be enhanced by the introduction of Ga2O3.•Bismuth glasses process excellent thermal stability for fiber drawing.•BBG3 has a broad emission band (Δλeff = 251.42 nm) and gain coefficient (10.89 cm−1). The influence of B2O3 ↔ Ga2O3 substitu...
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Published in | Infrared physics & technology Vol. 137; p. 105178 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.03.2024
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Subjects | |
Online Access | Get full text |
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Summary: | •The ∼ 2 μm emission intensity of Tm3+ doped bismuth glass can be enhanced by the introduction of Ga2O3.•Bismuth glasses process excellent thermal stability for fiber drawing.•BBG3 has a broad emission band (Δλeff = 251.42 nm) and gain coefficient (10.89 cm−1).
The influence of B2O3 ↔ Ga2O3 substitution on the ∼ 2 μm emission and gain properties of Tm3+-doped Bi2O3-B2O3-BaF2 glasses was investigated by absorption, fluorescence, and Raman spectroscopy. It is shown that the thermal stability was enhanced as Ga2O3 replaces the B2O3 component gradually, while [GaO4] and [BO4] units enter the network. When the concentration of Ga2O3 reaches 8 mol% (BBG3 glass), the maximum gain coefficient at ∼ 2 μm reaches 10.89 cm−1, which is larger than other glasses. Enhanced ∼ 2 μm emission and gain properties can be obtained by content Ga2O3 with the choice of 15 mol%. The WET of Tm3+ was calculated to reach 2051.7 × 10-20 cm3/s, indicating that an effective cross-relaxation process can be obtained. The Tm3+ doped bismuth glasses show potential as ∼ 2 μm fiber amplifiers. |
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ISSN: | 1350-4495 1879-0275 |
DOI: | 10.1016/j.infrared.2024.105178 |