Effect of crucible thermal conductivity on dislocation distribution in crystals in a silicon carbide physical vapor transport furnace

• Published in: Journal of crystal growth Vol. 603; p. 126981
• Main Authors: Miyazaki, Kazuma, Nakano, Satoshi, Nishizawa, Shin-ichi, Kakimoto, Koichi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.2023
• Subjects: A1. Computer simulation; A1. Line defects; A2. Growth from vapor; A1. Computer simulation; A1. Line defects; A2. Growth from vapor
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2022.126981

•This paper reports on the effect of thermal conductivity of a crucible on dislocation density in a SiC crystal.•Numerical study based on a model was carried out for modeling of dislocation density.•The small thermal conductivity of a crucible provides low dislocation density in a crystal. The effect of the thermal conductivity of a crucible in a silicon carbide physical vapor transport furnace on the dislocation distribution in crystal was investigated using numerical analysis. The numerical analysis includes stress and dislocation propagation calculations based on the Alexander–Haasen model. Modifying the thermal conductivity of the carbon crucible can reduce the dislocation density. It can also homogenize the temperature distribution in the radial distribution in the crystal. The density of dislocations could be further by reduced using a carbon crucible with low thermal conductivity.