Low-divergence single-mode ridge waveguide diode lasers

Ridge waveguide laser diodes of a GaAs-AlGaAs separate-confinement graded-index monolithically stacked triple-quantum-well structure have been fabricated. Chemically assisted ion beam etching (CAIBE) was used to etch a 4- mu m-wide mesa which serves as the waveguide for the device. Results for 4- mu...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 3; no. 3; pp. 199 - 201
Main Authors Harding, C.M., Chen, Y.C., Dalby, R.J.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.1991
Subjects
Diode lasers
Distributed Bragg reflectors
Distributed feedback devices
Etching
Laser feedback
Optical devices
Optical feedback
Optical waveguides
Power generation
Waveguide lasers
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Summary:Ridge waveguide laser diodes of a GaAs-AlGaAs separate-confinement graded-index monolithically stacked triple-quantum-well structure have been fabricated. Chemically assisted ion beam etching (CAIBE) was used to etch a 4- mu m-wide mesa which serves as the waveguide for the device. Results for 4- mu m-wide by 600- mu m-long optically coated devices are presented. Single-longitudinal mode, CW output power in excess of 90 mW and a far-field divergence of 21 degrees *3.5 degrees are demonstrated.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.79752