Study of Crater Defect Reduction in Cu Plating Process

In copper metallization of BEOL, ECP (electro chemical plating) is used for copper deposition in via or trench for interconnection after PVD barrier & seed process. Crater defect has been the most dangerous killer defect of ECP process these years. There will be serious impact on wafer yield if...

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Bibliographic Details
Published inECS transactions Vol. 27; no. 1; pp. 773 - 777
Main Authors Chen, Liang, Wu, Kan, He, Peng, Bian, Yi J., Zhang, Jiwei, Lin, Paul-Chang, Chiu, Wen-Pin, Xing, Cheng
Format Journal Article
LanguageEnglish
Published 01.01.2010
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Summary:In copper metallization of BEOL, ECP (electro chemical plating) is used for copper deposition in via or trench for interconnection after PVD barrier & seed process. Crater defect has been the most dangerous killer defect of ECP process these years. There will be serious impact on wafer yield if craters found after electroplating and CMP (Chemical Mechanism Polishing) process. In this paper, we've done experiments on several aspects to prevent crater from happening, and the results are optimistic.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3360709