Performances of Ni-Induced Lateral Crystallization Thin Film Transistors with and Needle Grains
Thin-film transistors (TFTs) fabricated using and needle grains have been investigated. They were fabricated by Ni–metal-induced lateral crystallization and Ni–metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device tr...
Saved in:
| Published in | Japanese Journal of Applied Physics Vol. 45; no. 7R; p. 5667 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
01.07.2006
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | Thin-film transistors (TFTs) fabricated using and needle grains have been investigated. They were fabricated by Ni–metal-induced lateral crystallization and Ni–metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (µ
FE
), 4-fold-higher on/off current ratio (
I
on
/
I
off
), and 2.4-fold-lower leakage current (
I
off
) compared with those of the 111-TFT. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.45.5667 |