Drift and diffusion in low-dimensional p - n junctions
We present a theoretical drift-and-diffusion study of the current-voltage characteristics of low-dimensional p-n junctions. Under low-level injection, low-dimensional p-n junctions exhibit current-voltage characteristics similar to those of three-dimensional diodes. Under high-level injection, the d...
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Published in | Journal of applied physics Vol. 75; no. 5; pp. 2516 - 2521 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
01.03.1994
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Online Access | Get full text |
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Summary: | We present a theoretical drift-and-diffusion study of the current-voltage characteristics of low-dimensional p-n junctions. Under low-level injection, low-dimensional p-n junctions exhibit current-voltage characteristics similar to those of three-dimensional diodes. Under high-level injection, the dependence of minority-carrier diffusion coefficients on the low-dimensional density of states may lead to the appearance of features in the small-signal properties. Such features become more pronounced as the temperature is lowered. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.356224 |